Factory Lead Time  

17 Weeks

Package / Case  

TO-226-3, TO-92-3 (TO-226AA)

Mounting Type  

Through Hole

Mount  

Through Hole

Number of Pins  

3

Weight  

453.59237mg

Transistor Element Material  

SILICON

Current - Continuous Drain (Id) @ 25℃  

270mA Ta

Drive Voltage (Max Rds On, Min Rds On)  

5V 10V

Power Dissipation (Max)  

625mW Ta

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

2.5V @ 1mA

Number of Elements  

1

Published  

2006

Packaging  

Bulk

Operating Temperature  

-55°C~150°C TJ

JESD-609 Code  

e3

Pbfree Code  

yes

Part Status  

Active

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

ECCN Code  

EAR99

Resistance  

5Ohm

Terminal Finish  

Matte Tin (Sn)

Voltage - Rated DC  

60V

Terminal Position  

BOTTOM

Terminal Form  

WIRE

Peak Reflow Temperature (Cel)  

260

Current Rating  

270mA

Time@Peak Reflow Temperature-Max (s)  

40

Lead Pitch  

1.27mm

Number of Channels  

1

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

625mW

FET Type  

N-Channel

Rds On (Max) @ Id, Vgs  

5 Ω @ 500mA, 10V

Input Capacitance (Ciss) (Max) @ Vds  

60pF @ 25V

Vgs (Max)  

±20V

Continuous Drain Current (ID)  

270mA

Threshold Voltage  

2.5V

Gate to Source Voltage (Vgs)  

20V

Drain Current-Max (Abs) (ID)  

0.27A

Drain to Source Breakdown Voltage  

60V

Feedback Cap-Max (Crss)  

5 pF

Height  

4.01mm

Width  

2.41mm

Length  

4.77mm

REACH SVHC  

No SVHC

Radiation Hardening  

No

RoHS Status  

ROHS3 Compliant

Lead Free  

Lead Free